OPTICAL AND STRUCTURAL PROPERTIES OF BaZnO3 PEROVSKITE FILMS PREPARED BY CHEMICAL BATH DEPOSITION METHOD FOR SEMICONDUCTOR APPLICATIONS
PROPIEDADES ÓPTICAS Y ESTRUCTURALES DE PELÍCULAS DE PEROVSKITA BaZnO3 PREPARADAS MEDIANTE EL MÉTODO DE DEPOSICIÓN QUÍMICA EN BAÑO PARA APLICACIONES EN SEMICONDUCTORES
DOI:
https://doi.org/10.15446/mo.n73.126147Keywords:
chemical Bath Deposition., BaZnO3;, Structural properties;, Optics properties, Perovskite (en)Perovskita, propiedades ópticas, propiedades estructurales, BaZnO3, deposición química en baño, difracción de rayos X (es)
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Thin films of perovskite (BaZnO3) were prepared by the chemical bath deposition (CBD) method on glass substrates from three solutions that included different concentrations of KOH (0.6, 1.2 and 1.8 mol.), mixed with a constant concentration of (0.6) mol of (KCl) and 0.6 mol of (BaCl2) at 85 °C and a precipitation time of 20 minutes. The optical property curves showed a clear change with varying concentration of (KOH). Films of BaZnO3 were prepared from a solution containing 1.2 mol of KOH, exhibited the highest absorbance, and had a good energy gap (1.8 eV) while their absorbance and reflectivity were lower than those at other concentrations. This is attributed to the increased perovskite content resulting from the chemical reaction of KOH with (BaCl2) and (ZnCl2). This increased perovskite content leads to the growth and aggregation of most particles, reducing their adhesion to the glass substrate. In contrast, smaller particles that did not undergo growth or aggregation adhered better to the glass substrate. Solutions containing lower KOH concentrations exhibited relatively stable properties across the wavelength range of 340–1100 nm. This stability was also observed in the refractive index and extinction coefficient as a function of wavelength. The energy gap of films prepared from solutions containing different KOH concentrations was calculated, revealing that the energy gap varies depending on the KCl concentration. This change can be utilized in industrial semiconductor applications, including solar cells, diodes, and transistors …etc.
Se prepararon películas delgadas de perovskita (BaZnO3) mediante el método de deposición química en baño (CBD) sobre sustratos de vidrio a partir de tres soluciones que incluían diferentes concentraciones de KOH (0,6, 1,2 y 1,8 mol), mezcladas con una concentración constante de (0,6) mol de (KCl) y 0,6 mol de (BaCl2) a 85 °C y un tiempo de precipitación de 20 minutos. Las curvas de propiedades ópticas mostraron un cambio claro con la variación de la concentración de (KOH). Las películas de BaZnO3 preparadas a partir de una solución que contenía 1,2 mol de KOH exhibieron la mayor absorbancia y una banda prohibida adecuada (1,8 eV), mientras que su absorbancia y reflectividad fueron menores que las de las otras concentraciones. Esto se atribuye al aumento del contenido de perovskita resultante de la reacción química del KOH con (BaCl2) y (ZnCl2). Este aumento del contenido de perovskita conduce al crecimiento y agregación de la mayoría de las partículas, reduciendo su adhesión al sustrato de vidrio. En contraste, las partículas más pequeñas, que no experimentaron crecimiento ni agregación, se adhirieron mejor al sustrato de vidrio. Las soluciones con menor concentración de KOH mostraron propiedades relativamente estables en el rango de longitud de onda de 340 a 1100 nm. Esta estabilidad también se observó en el índice de refracción y el coeficiente de extinción en función de la longitud de onda. Se calculó la brecha de energía de las películas preparadas a partir de soluciones con diferentes concentraciones de KOH, revelando que esta varía según la concentración de KCl. Este cambio puede utilizarse en aplicaciones industriales de semiconductores, como células solares, diodos y transistores, entre otros.
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