Increased Power Capability in MOSFETs by Capacitive Coupling of Gate Signals

High voltage pulsed power supplies generate pulsed electric fields which are widely used in biotechnology applications due to high efficient related to different pulse parameters delivered by pulsed power supply. However, design and implementation involves limitations in the maximum operating voltage and the pulse generation with very short pulse widths. Therefore, in this paper design of a high voltaje pulsed power supply with a proposed configuration of MOSFETs capable of supplying 3000V and adjustable pulse widths from 1us is presented. Proposed configuration is tested and compared with a single MOSFET circuit. Finally, experimental setup is implemented and tested through variations in load resistance and output resistance of driver MOSFET in order to verify performance of MOSFETs in proposed configuration and evaluate effects on parameters that define pulse shape as rise time, fall time, amplitude and pulse width.