Published

2012-07-01

CARACTERIZACIÓN DE PELICULAS DE FOSFURO DE GALIO NITROGENADO

CHARACTERIZATION OF NITROGENATED GALLIUM PHOSPHIDE FILMS

Keywords:

Pulverización catódica, GaPN, Raman, SEM. (es)
Magnetron Sputtering, GaPN, Raman, SEM. (en)

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Authors

  • Alvaro Pulzara Mora Laboratorio de Nanoestructuras Semiconductoras, Grupo de Investigacion en Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia Sede Manizales, A.A. 127
  • Miguel Melendez Lira Departamento de Fsica, Centro de Investigacion y Estudios Avanzados del IPN, Mexico 07000, Distrito Federal, Mexico.
  • Máximo López López Departamento de Física, Centro de Investigación y Estudios Avanzados del IPN, México 07000, Distrito Federal, México

Las películas de GaP1-xNx fueron depositaron por magnetrón sputtering sobre substratos silicio (100) variando la temperaturas del substrato desde 420 oC hasta 520 oC. Difracción de rayos-X muestran que las películas son policristalinas con orientación preferencial en la dirección (111). Micrografías de alta resolución tomadas en sección transversal con un microscopio electrónico de barrido, muestran un crecimiento columnar. Espectros Raman evidencian  la existencia de modos vibracionales TO y LO localizados en 370 y 408 cm-1 asociados a GaP, y un modo fonónico local alrededor de 390 cms-1 relacionado con el desorden estructural inducido por nitrógeno, debido probablemente a la incorporación de átomos y/o clusters de N en la matriz de GaP.

GaPN thin films were deposited on Silicon (100) substrates, in the range of 420-520 oC by r-f magnetron sputtering employing a nitrogen–argon atmosphere. According to X-ray measurements the GaPN films are polycrystalline with preferential orientation along of (111) direction. High resolution scanning electron microscopy (HRSEM) images taken in cross sectional show a columnar growth. Raman spectra show TO and LO vibrational phonon modes at 370 and 408 cm-1 associated to GaP, and a local phonon mode around 390 cm-1, likely related with N-induced disorder or N-cluster formation in GaP host.

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