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INFLUENCIA DE LA TEMPERATURA DE SUSTRATO SOBRE LAS PROPIEDADES ÓPTICAS Y ESTRUCTURALES DE ALEACIONES GaSb:Ni
INFLUENCE OF THE SUBSTRATE TEMPERATURE ON OPTICAL AND STRUCTURAL PROPERTIES OF GaSb:Ni ALLOYS
Keywords:
GaSb, Ni, Semiconductores, Aleaciones metálicas (es)GaSb, Ni, Semiconductors, Metallic alloys. (en)
Películas delgadas de aleaciones ternarias de GaSb:Ni fueron preparadas por el método de pulverización catódica (DC magnetrón Co{Sputtering) variando la temperatura de sustrato (Ts). A partir de medidas de transmitancia espectral y difracción de rayos X (XRD) fueron obtenidas las constantes ópticas y las propiedades estructurales del material, respectivamente. Fases predominantes de GaSb y NiSb fueron observadas para todas las variaciones de Ts. A partir de medidas de absorción del material el valor de la banda de energía prohibida o “band gap” fue obtenido,variando entre 0,63 eV y 0,72 eV. Se reporta el coeficiente de extinción en función de la longitud de onda de las películas de GaSb:Ni.
GaSb:Ni ternary alloys thin films were deposited via sputtering method (DC magnetron Co{Sputtering) varying the substrate temperature (Ts). From spectra transmittance measurements and X-ray diffraction (XRD) were obtained the optical constants and structural properties of material, respectively. Predominant phases of GaSb and NiSb were observed for all Ts variations. From absorption measurements, the value of energy band forbidden or “band gap” was obtained varying between 0,63 eV and 0,72 eV. The extinction coefficient as a function of wavelength of the GaSb:Ni thin films, was reported.
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