Published
AlN film deposition as a semiconductor device
Deposición de películas de AlN como dispositivos semiconductores
Keywords:
Pulsed laser deposition, aluminium nitride, acoustic wave speed (en)nitruro de aluminio, deposición de láser pulsado, reflectancia óptica, pureza del color, respuesta de frecuencia, velocidad de la onda acústica (es)
AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target. The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (100) substrates. The working pressure was 9x10-3 mbar and the substrate temperature was varied from 200°C to 630°C. The thickness measured by profilometer was 150 nm for all films. Moreover, surface acoustic wave (SAW) devices with a Mo/AlN/Si configuration have been fabricated using AlN-buffer and Mo Channel. The films’ morphology and composition were studied using scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX), respectively. The films’ optical reflectance spectra and colour coordinates were obtained by optical spectral reflectometry in the 400-900 cm-1 range using an Ocean Optics 2000 spectrophotometer. The present work found clear dependence on morphological properties, reflectance, dominant wavelength colour purity, frequency response and acoustic wave speed in terms of the temperature applied to the substrate. About 30% reduction in reflectance was observed and increased acoustic wave speed of about 1.3 % when the temperature was increased from 200°C to 630°C.
Películas de AlN fueron depositados por la técnica de deposición por láser pulsado (PLD), utilizando un láser Nd: YAG con una longitud de onda de 1064 nm. Las películas fueron depositadas en una atmósfera de nitrógeno como gas de trabajo; como cátodo se usó aluminio de alta pureza (99,99%). Las películas fueron depositadas con una fluencia del láser de 2,28 J/cm2 durante 10 minutos sobre sustratos de silicio (100). La presión de trabajo fue de 9 x 10-3 mbar y la temperatura del sustrato se varió desde 200 °C a 630 °C. El espesor medido por perfilometría fue de 150 nm para todas las películas. Además se fabricaron los dispositivos de ondas acústicas de superficie (SAW) con una configuración Mo/AlN/Si, empleando AlN-bufer y un canal de Mo. La morfología y la composición de las películas se estudiaron mediante microscopía electrónica de barrido (MEB) y energía dispersiva de rayos X de análisis (EDX), respectivamente. Los espectros de reflectancia óptica y color de coordenadas de las películas se obtuvieron por la técnica óptica reflectometría espectral en el rango de 400-900 cm-1 por medio de un espectrofotómetro Ocean Optics 2000. En este trabajo se encontró una clara dependencia de las propiedades morfológicas, reflectancia, pureza dominante, longitud de onda del color, la respuesta de frecuencia y velocidad de la onda acústica en términos de la temperatura aplicada al sustrato. Se observó una reducción en la reflectancia de aproximadamente 30% y aumento de velocidad de la onda acústica de aproximadamente 1,3% cuando la temperatura se incrementó desde 200 °C a 630 °C.
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