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GaAs/AlGaAs nanoheterostructures: Simulation and application on high mobility transistors
Nanoheteroestructuras de GaAs/AlGaAs. Simulación y aplicación en transistores de alta movilidad
DOI:
https://doi.org/10.15446/ing.investig.v31n1.20535Keywords:
HEMT, heterostructure, DESSIS, simulation. (en)HEMT, heteroestructuras, DESSIS, simulación. (es)
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This work analyses the features of GaAs/AlGaAs heterostructure, highlighting semiconductor junction properties. Charge confinement was produced when two materials having different band-gap were fixed; such high electron concentration is called two-dimensional electron gas (2DEG). Device simulation for smart integrated systems (DESSIS) is simulation software which uses physical models and robust numerical methods for simulating semiconductor devices and 3-5 element heterostructures. Results for different heterostructure doping profiles and voltages are presented in this work. High electron mobility transistors (HEMTs) are one of the most important applications for heterostructures; they work on 30 to 300 GHz frequency ranges. These transistors are simulated in this work; a 1 A/mm2 high current density was obtained in the channel, such value being comparable to other values reported for similar transistors.
En este trabajo se analizan las características de la heteroestructura de GaAs/AlGaAs haciendo énfasis en las propiedades de la unión de ambos semiconductores. Cuando se unen dos materiales, con diferentes anchos en las bandas prohibidas, ocurre un confinamiento de portadores que se les puede describir como un gas de electrones bidimensional. DESSIS (Device Simulation for Smart Integrated Systems) es un programa de simulación que mediante modelos físicos y métodos numéricos robustos permite la simulación de dispositivos semiconductores y de heteroestructuras compuestas por elementos de los grupos III-V de la tabla periódica. Los resultados para diferentes dopajes y voltajes aplicados en la heteroestructura son presentados en este trabajo.
Los transistores de alta movilidad (HEMT, High Electron Mobility Transistor) son una de las aplicaciones más importantes de las propiedades de las heteroestructuras, con frecuencias de trabajo en el rango de 30 a 300 GHz. La simulación de un ejemplo de estos transistores es presentada en este trabajo, lográndose una densidad de corriente máxima en el canal de 1 A/mm2 comparable con resultados reportados para transistores similares.
References
Beamont, S. P., The applications of nanotechnology in electronic devices., IEEE Proceeding, 1994.
Chang, W. C., Improving breakdown voltage in AlGaAs/GaAs HEMT by gate oxidation., Journal of Optoelectronics and Advanced Materials, 8(1), 2006.
Cho, A. Y., Molecular Beam Epitaxy., AIP, 1994.
Fujitsu., Fujitsu develops GaN HEMT power amplifier featuring world's highest output in millimeter-wave W-Band., from http://www.physorg.com/news205606729.html, 2010.
Fukuta, M., History of HEMT Transistors., Journal of the JSPE, 1999.
Martz, C., InP HEMT - Indium Phosphide High Electron Mobility Transistor., NASA Scientific and Technical Aerospace Reports, 43(15), 2005.
Mishra, U. K., AlGaN/GaN HEMTs: An overview of device operation and applications. Electrical & Computer Engineering Department., Santa Barbara, California, University of California. Ph.D., 2009.
Notthoff, J. K., Zuleeg, R., High speed, low power GaAs JFET integrated circuits., IEDM Dig. Tech., Papers: 624, 1975.
Rashid, M. H., Circuitos microelectrónicos, análisis y diseño., University of Florida, 2000.
Thayne, I., Enabling nanofabrication., DTI Public Service Review, 2004.
Thayne, I., Very high performance 50nm T-gate III-V HEMTs enabled by Robust Nanofabrication Technologies., 4th IEEE Conference on Nanotechnology, 2004.
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Copyright (c) 2011 Eduardo Martín Rodríguez, Estrella González R.
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